SJMN90R1K2I
SJMN90R1K2I is N-Channel MOSFET manufactured by Kodenshi AUK Group.
Features
- Drain-source breakdown voltage: BVDSS=900V
- Low gate charge device: Qg=13n C (Typ.)
- Low drain-source On-resistance: RDS(on)=1Ω (Typ.)
- Advanced trench process technology
- High avalanche energy, 100% test
Ordering Information
Part Number
Marking
Package
SJMN90R1K2
Marking Information
I-PAK
I-PAK
SJMN 90R1K2 YWW-
Column 1, 2: Device Code Column 3: Production Information e.g.) YWW-
-. YWW: Date Code (year, week) -.
- : Management Code
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage Gate-source voltage
Drain current (DC)
- Drain current (Pulsed)
- Single pulsed avalanche energy (Note 1) Single avalanche current Power dissipation Operating junction temperature Storage temperature range
VDSS
VGSS
TC=25°C ID
TC=100°C
Tstg
- Limited only maximum junction temperature
Rating 900 ±30 6.5 4 19.5...
