• Part: SMK2050CI
  • Description: Advanced N-Ch Power MOSFET
  • Category: MOSFET
  • Manufacturer: Kodenshi AUK Group
  • Size: 429.12 KB
Download SMK2050CI Datasheet PDF
Kodenshi AUK Group
SMK2050CI
SMK2050CI is Advanced N-Ch Power MOSFET manufactured by Kodenshi AUK Group.
Features - - - - High Voltage : BVDSS=500V(Min.) Low Crss : Crss=27p F(Typ.) Low gate charge : Qg=65n C(Typ.) Low RDS(on) : RDS(on)=0.26Ω(Max.) G Package Code TO-3P G DS TO-3P PIN Connection Ordering Information Type No. SMK2050CI Marking SMK2050 Marking Diagram Column 1 : Manufacturer AUK GYMDD SMK2050 Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) - Drain current (Pulsed) - Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 500 30 20 12.6 80 150 20 1000 20 28 150 -55~150 Unit V V A A A W A m J A m J C Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range - Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max. 0.83 40 Unit C/W KSD-T0V002-001 Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs...