• Part: SNN0310Q
  • Description: Advanced N-Ch Trench MOSFET
  • Category: MOSFET
  • Manufacturer: Kodenshi AUK Group
  • Size: 362.85 KB
Download SNN0310Q Datasheet PDF
Kodenshi AUK Group
SNN0310Q
SNN0310Q is Advanced N-Ch Trench MOSFET manufactured by Kodenshi AUK Group.
Features - Max. RDS(ON) = 150m at VGS = 10V, ID = 2A - Low gate charge: Qg=18n C (Typ.) - High performance trench technology for extremely low RDS(on) - 100% avalanche tested - Halogen free and Ro HS pliant device Ordering Information Part Number Marking Package SOT-223 SOT-223 Marking Information SNN0310Q YWW Column 1: Device Code Column 2: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) - Drain current (Pulsed) - Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS Tc=25C Tc=100C Tstg - Limited only maximum junction...