SNN0310Q
SNN0310Q is Advanced N-Ch Trench MOSFET manufactured by Kodenshi AUK Group.
Features
- Max. RDS(ON) = 150m at VGS = 10V, ID = 2A
- Low gate charge: Qg=18n C (Typ.)
- High performance trench technology for extremely low RDS(on)
- 100% avalanche tested
- Halogen free and Ro HS pliant device
Ordering Information
Part Number
Marking
Package
SOT-223
SOT-223
Marking Information
SNN0310Q YWW
Column 1: Device Code Column 2: Production Information e.g.) YWW
-. Y: Year Code
-. WW: Week Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage Gate-source voltage
Drain current (DC)
- Drain current (Pulsed)
- Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range
VDSS
VGSS
Tc=25C Tc=100C
Tstg
- Limited only maximum junction...