SNN0630Q Datasheet | Kodenshi AUK Group

Features - Low On-state resistance: 28m at VGS = 10V, ID = 2.9A - Low gate charge: Qg= 4.5n C (Typ.) - High performance trench technology for extremely low RDS(on) - 100% avalanche tested - Halogen free and Ro HS pliant device Ordering Information Part Number Marking Package SNN0630 SOT-223 SOT-223 Marking Information SNN0630 YWW Column 1: Device Code Column 2: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) - Drain current (Pulsed) - Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS Tc=25C Tc=70C Tstg - Limited only maximum...