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2KK5085DFN - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 100 V.
  • ID = 60 A.
  • RDS(ON) (at VGS = 10 V) < 8.2 mΩ PDFN5x6-8 S D S D S D G D.
  • Absolute Maximum Ratings (TC = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Package Limited Continuous Drain Current ID TC = 100℃ Pulsed Drain Current (Note 1) IDM Power Dissipation PD Derating factor Single Pulse Avalanche Energy (Note 2) EAS Thermal Resistance. Junction- to-Case (Note 3) RθJC Junction Temper.

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SMD Type MOSFET N-Channel MOSFET 2KK5085DFN ■ Features ● VDS (V) = 100 V ● ID = 60 A ● RDS(ON) (at VGS = 10 V) < 8.2 mΩ PDFN5x6-8 S D S D S D G D ■ Absolute Maximum Ratings (TC = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Package Limited Continuous Drain Current ID TC = 100℃ Pulsed Drain Current (Note 1) IDM Power Dissipation PD Derating factor Single Pulse Avalanche Energy (Note 2) EAS Thermal Resistance.Junction- to-Case (Note 3) RθJC Junction Temperature TJ Storage Temperature Range Tstg Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. EAS condition : Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω 3. Surface Mounted on FR4 Board, t ≤ 10 sec. Rating 100 ±20 60 42.