Kexin Electronics 2KK5085DFN
N-Channel MOSFET
FEATURES
● VDS (V) = 100 V● ID = 60 A
● RDS(ON) (at VGS = 10 V) < 8.2 mΩ PDFN5x6-8 S D S D S D G D
●
ABSOLUTE MAXIMUM RATINGS
(TC = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Package Limited Continuous Drain Current ID TC = 100℃ Pulsed Drain Current (Note 1) IDM Power Dissipation PD Derating factor Single Pulse Avalanche Energy (Note 2) EAS Thermal Resistance.Junction- to-Case (Note 3) RθJC Junction Temperature TJ Storage Temperature Range Tstg Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. EAS condition : Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω 3. Surface Mounted on FR4 Board, t ≤ 10 sec. Rating 100 ±20 60 42.5 240 105 0.84 250 1.2 150 -55 to 150 Unit V A W W/℃ mJ ℃/W ℃ 1 SMD Type N-Channel MOSFET 2KK5085DFN●
ELECTRICAL CHARACTERISTICS
(TC = 25℃ unless othewise specified) Parameter Off Characteristics Symbol Test Conditions Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Sour...