High current (max. 500 mA) Low voltage (max. 50 V) Low collector-emitter saturation voltage (max. 600 mV). Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient
Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth j-a
Rating -60 -50 -5 -.
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SMD Type
TransistIoCrs
PNP General Purpose Transistor 2PB1219A
Features
High current (max. 500 mA) Low voltage (max. 50 V) Low collector-emitter saturation voltage (max. 600 mV).
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient
Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth j-a
Rating -60 -50 -5 -500 -1 -200 200
-65 to +150 150
-65 to +150 625
Unit V V V mA A mA
mW
K/W
1 Emitter 2 Base 3 Collector
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2PB1219A Datasheet
