2PB1219A Datasheet | Kexin Semiconductor

Features High current (max. 500 m A) Low voltage (max. 50 V) Low collector-emitter saturation voltage (max. 600 m V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth j-a Rating -60 -50 -5 -500 -1 -200 200 -65 to +150 150 -65 to +150 625 Unit V V V m A A m A m W K/W 1 Emitter 2 Base 3 Collector .kexin..cn 1 SMD Type Transist Io Crs Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain 2PB1219AQ 2PB1219AR 2PB1219AS Collector-emitter saturation voltage Base-emitter saturation voltage Collector capacitance Transition frequency 2PB1219AQ 2PB1219AR 2PB1219AS - Pulse test: tp 300 ìs; ä 0.02. Symbol Testconditons ICBO IE = 0; VCB = -20 V IE = 0; VCB = -20 V; Tj = 150 IEBO IC = 0; VEB = -4 V Min Typ Max Unit -100 n A -5 ìA -100 n A h FE IC = -150 m A; VCE = -10 V; - VCE(sat) IC = -300 m A; IB = -30 m A; - VBE(sat) IC = -300 m A; IB = -30 m A; - Cc IE = ie = 0; VCB = -10 V; f = 1 MHz 85 170 120 240 170 340 -600 m V -1.5 V 15 p F f T IC = 50 m A; VCE = -10 V;f = 100 MHz;- 100 120 140 MHz h FE Classification TYPE Marking 2PB1219AQ DQ 2PB1219AR 2PB1219AS 2...