2PB1219A Datasheet | NXP Semiconductors

FEATURES - High current (max. 500 m A) - Low voltage (max. 50 V) - Low collector-emitter saturation voltage (max. 600 m V). APPLICATIONS - General purpose switching and amplification. DESCRIPTION handbook, halfpage PINNING PIN 1 2 3 base emitter collector DESCRIPTION PNP transistor in a SOT323; SC70 plastic package. NPN plement: 2PD1820A. MARKING TYPE NUMBER 2PB1219AQ 2PB1219AR 2PB1219AS Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) D∗Q D∗R D∗S Fig.1 Simplified outline (SOT323; SC70) and symbol. 1 Top view 2 MAM048 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Refer to SOT323; SC70 standard mounting conditions. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. - 60 - 50 - 5 - 500 - 1 - 200 200 +150 150 +150 V V V m A A m A m W °C °C °C UNIT 1999 Apr 12 Philips Semiconductors Product specification PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT323; SC70 standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain 2PB1219AQ 2PB1219AR 2PB1219AS h FE VCEsat VBEsat Cc f T DC current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency 2PB1219AQ 2PB1219AR 2PB1219AS Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. IC = - 500 m A; VCE = - 10 V; note 1 IC = - 300 m A; IB = - 30 m A; note 1 IC = - 300 m A; IB = - 30 m A; note 1 IE = ie = 0; VCB = - 10 V; f = 1 MHz IC = 50 m A; VCE...