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2SA1462 - Transistor

Key Features

  • +0.1 2.4-0.1 High speed,high voltage switching. High ft:fT=1800MHz TYP. Low Cob:Cob=2.0pF TYP. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collecto to emitter voltage Emitter to base voltage Collector current Total power dissipation TA=25 Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -15 -15 -4.5 -50 200 150 -55.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type PNP Silicon Epitaxia Transistor 2SA1462 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 High speed,high voltage switching. High ft:fT=1800MHz TYP. Low Cob:Cob=2.0pF TYP. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collecto to emitter voltage Emitter to base voltage Collector current Total power dissipation TA=25 Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -15 -15 -4.