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SMD Type
PNP Silicon Epitaxia 2SA1463
Transistors IC
Features
High speed,high voltage switching. Low Collector Saturation Voltage
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage Collecto to emitter voltage Emitter to base voltage Collector current(DC) Collector current(Pulse)* Total power dissipation Junction temperature Storage temperature *.pw 10 ms,Duty Cycle 50% Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating -60 -45 -5.0 -1.0 -2.0 20 150 -55 to +150 Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time * Pulse test: tp 350 ìs; d 0.02.