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2SB1574 - Silicon PNP Epitaxial Planar Transistor

Key Features

  • Possible to tsolder radiation fin directly to printed circuit boad. Type with universal characteristics. +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 High collector-base voltage (Emitter open) VCBO. High collector-emitter voltage (Base open) VCEO. Large collector current IC. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parame.

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SMD Type Silicon PNP Epitaxial Planar Type 2SB1574 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Possible to tsolder radiation fin directly to printed circuit boad. Type with universal characteristics. +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 High collector-base voltage (Emitter open) VCBO. High collector-emitter voltage (Base open) VCEO. Large collector current IC. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.