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Power Transistors
2SB1574 (Tentative)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency output amplification
7.3± 0.1 1.8± 0.1
6.5± 0.1 5.3± 0.1 4.35± 0.1
2.3± 0.1 0.5± 0.1
2.5± 0.1
0.8max
q q q q
Possible to solder radiation fin directly to printed cicuit boad Type with universal characteristics Collector breakdown voltage: VCBO/VCEO = –50V Collector current: IC = –2A
0.93±0.1
1.0± 0.1 0.1± 0.05 0.5± 0.1
0.75± 0.1 2.3± 0.1 4.6± 0.