FEATURES
+0.1 2.4-0.1 Low VCE(sat): (VCE(sat) = 0.07 V TYP). 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 High DC current Gain: hFE = 1000 to 3200. 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 60 50 12 150 200 150 -55 to +150 Unit V V V mA mW ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Base-emitter voltage * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE VBE Testconditons VCB = 50V, IE=0 VEB = 10V, IC=0 VCE = 5V , IC = 1mA VCE = 5V , IC = 1mA 1000 1800 0.56 0.07 0.8 250 3 0.13 0.72 1.22 0.3...