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2SC3624 - Transistor

Key Features

  • +0.1 2.4-0.1 Low VCE(sat): (VCE(sat) = 0.07 V TYP). 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 High DC current Gain: hFE = 1000 to 3200. 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 60 50 12 150 200 150 -5.

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SMD Type NPN Silicon Epitaxial Transistor 2SC3624 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low VCE(sat): (VCE(sat) = 0.07 V TYP). 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 High DC current Gain: hFE = 1000 to 3200. 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.