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2SJ203 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-16V.
  • ID =-200m A.
  • RDS(ON) ＜ 23Ω (VGS =-2.5V).
  • RDS(ON) ＜ 10Ω (VGS =-4V) +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 +0.2 1.1 -0.1 0-0.1 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -16 V VGS ±7 Continuous Drain Current Pulsed Drain Cur.

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SMD Type P-Channel MOSFET 2SJ203 ■ Features ● VDS (V) =-16V ● ID =-200m A ● RDS(ON) ＜ 23Ω (VGS =-2.5V) ● RDS(ON) ＜ 10Ω (VGS =-4V) +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 +0.2 1.1 -0.1 0-0.1 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -16 V VGS ±7 Continuous Drain Current Pulsed Drain Current (Note.1) ID -200 mA IDM -400 Power Dissipation PD 200 mW Junction Temperature TJ 150 Operating Temperature Topt -55 to 80 ℃ Junction Storage Temperature Range Tstg -55 to 150 Note.