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2SJ324-Z - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-2 A.
  • RDS(ON) ＜ 250mΩ (VGS =-10V).
  • RDS(ON) ＜ 520mΩ (VGS =-4V) +0 9.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 1.50 0.15 -0.15 3.80 + 5.55 0.15 -0.15 + 0.15 0 .5 0 -0.15 + 0.28 1 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.25 2 .6 5 -0.1 1 Gate 2 Drain 3 Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuo.

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SMD Type P-Channel MOSFET 2SJ324-Z MOSFET ■ Features ● VDS (V) =-30V ● ID =-2 A ● RDS(ON) ＜ 250mΩ (VGS =-10V) ● RDS(ON) ＜ 520mΩ (VGS =-4V) +0 9.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 1.50 0.15 -0.15 3.80 + 5.55 0.15 -0.15 + 0.15 0 .5 0 -0.15 + 0.28 1 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.25 2 .6 5 -0.1 1 Gate 2 Drain 3 Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Tc = 25 ℃ Ta = 25 ℃ Junction Temperature Junction Storage Temperature Range Symbol Rating Unit VDS -30 V VGS ±20 ID -2 A IDM -8 20 PD W 1 TJ 150 ℃ Tstg -55 to 150 Note.