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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ324,324-Z
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION The 2SJ324 is P-channel MOS Field Effect Transistor designed for
solenoid, motor and lamp driver.
FEATURES • Low On-state Resistance
RDS(on) = 0.18 Ω TYP. (VGS = −10 V, ID = −1.0 A) RDS(on) = 0.36 Ω TYP. (VGS = −4 V, ID = −0.8 A) • Low Ciss: Ciss = 330 pF TYP. • Built-in G-S Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
−30
V
Gate to Source Voltage (AC)
VGSS
m20
V
Gate to Source Voltage (DC)
VGSS
−20, +10
V
Drain Current (DC) Drain Current (pulse) Note
ID(DC)
m2.0
A
ID(pulse)
m8.0
A
Total Power Dissipation (TC = 25°C)
PT1
20
W
Total Power Dissipation (TA = 25°C)
PT2
1.
2SJ324 Datasheet
