Datasheet4U Logo Datasheet4U.com

2SJ324 - MOS Field Effect Power Transistors

Key Features

  • Low on-state resistance RDS(on)=0.18 (VGS=-10V,ID=-1A) RDS(on)=0.36 (VGS=-4V,ID=-0.8A) Built-in G-S Gate Protection Diode +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage (DC) Gate to.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SJ324 P-Channel MOSFET NEC
2SJ324 P-CHANNEL POWER MOSFET Renesas
2SJ324 30V P-Channel MOSFET VBsemi
2SJ324-Z P-CHANNEL POWER MOSFET Renesas
2SJ324-Z 30V P-Channel MOSFET VBsemi

Other Datasheets by Kexin Semiconductor

Part Number Description
2SJ324-Z P-Channel MOSFET
2SJ325 MOS Field Effect Power Transistors
2SJ3001 P-Channel MOSFET
2SJ3001DS P-Channel Enhancement MOSFET
2SJ302 Mos Field Effect Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type MOSFICET MOS Field Effect Power Transistors 2SJ324 Features Low on-state resistance RDS(on)=0.18 (VGS=-10V,ID=-1A) RDS(on)=0.36 (VGS=-4V,ID=-0.8A) Built-in G-S Gate Protection Diode +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage (DC) Gate to source voltage (AC) Drain current (DC) Drain current(pulse) * Power dissipation TC=25 TA=25 Channel temperature Storage temperature Symbol Rating Unit VDSS -30 V VGSS -20,+10 V VGSS 20 V ID 2.0 A ID 8.