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2SJ324-Z - P-CHANNEL POWER MOSFET

Download the 2SJ324-Z datasheet PDF. This datasheet also covers the 2SJ324 variant, as both devices belong to the same p-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

solenoid, motor and lamp driver.

Key Features

  • Low On-state Resistance RDS(on) = 0.18 Ω TYP. (VGS =.
  • 10 V, ID =.
  • 1.0 A) RDS(on) = 0.36 Ω TYP. (VGS =.
  • 4 V, ID =.
  • 0.8 A).
  • Low Ciss: Ciss = 330 pF TYP.
  • Built-in G-S Gate Protection Diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SJ324-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SJ324-Z
Manufacturer Renesas
File Size 1.77 MB
Description P-CHANNEL POWER MOSFET
Datasheet download datasheet 2SJ324-Z Datasheet

📁 Similar Datasheet

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Other Datasheets by Renesas

Part Number Description
2SJ324 P-CHANNEL POWER MOSFET
2SJ325 P-CHANNEL POWER MOSFET
2SJ325-Z P-CHANNEL POWER MOSFET
2SJ350 Silicon P-Channel MOSFET
2SJ358C P-CHANNEL MOSFET FOR SWITCHING

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ324,324-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ324 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance RDS(on) = 0.18 Ω TYP. (VGS = −10 V, ID = −1.0 A) RDS(on) = 0.36 Ω TYP. (VGS = −4 V, ID = −0.8 A) • Low Ciss: Ciss = 330 pF TYP. • Built-in G-S Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS −30 V Gate to Source Voltage (AC) VGSS m20 V Gate to Source Voltage (DC) VGSS −20, +10 V Drain Current (DC) Drain Current (pulse) Note ID(DC) m2.0 A ID(pulse) m8.0 A Total Power Dissipation (TC = 25°C) PT1 20 W Total Power Dissipation (TA = 25°C) PT2 1.