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2SJ356 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-60V.
  • ID =-2 A (VGS =-10V).
  • RDS(ON) ＜ 0.5Ω (VGS =-10V).
  • RDS(ON) ＜ 0.95Ω (VGS =-4V) Drain (D) Gate (G) Internal diode Gate protection diode Source (S) 1.70 0.1 0.42 0.1 0.46 0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current （Note.1) Power Dissipation Junction Temperature Junction Storage Temperature Range Symbol Rating Unit VDS -60 V VGS -20,+10 ID -2 A.

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SMD Type P-Channel MOSFET 2SJ356 MOSFET ■ Features ● VDS (V) =-60V ● ID =-2 A (VGS =-10V) ● RDS(ON) ＜ 0.5Ω (VGS =-10V) ● RDS(ON) ＜ 0.95Ω (VGS =-4V) Drain (D) Gate (G) Internal diode Gate protection diode Source (S) 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current （Note.1) Power Dissipation Junction Temperature Junction Storage Temperature Range Symbol Rating Unit VDS -60 V VGS -20,+10 ID -2 A IDM -4 PD 2 W TJ 150 ℃ Tstg -55 to 150 Note.1: PW ≤ 10 ms, duty cycle ≤ 1% 1.Gate 2.Drain 3.Source www.kexin.com.