2SJ356 Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. PACKAGE DIMENSIONS (in mm) 4.5 ±0.1 1.6 ±0.2...
2SJ356 Key Features
- Can be directly driven by 5-V IC
- Low ON resistance RDS(on) = 0.95 Ω MAX. @VGS = -4 V, ID = -1.0 A RDS(on) = 0.50 Ω MAX. @VGS = -10 V, ID = -1.0 A
