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2SJ356 - P-Channel MOSFET

Key Features

  • Can be directly driven by 5-V IC.
  • Low ON resistance RDS(on) = 0.95 Ω MAX. @VGS =.
  • 4 V, ID =.
  • 1.0 A RDS(on) = 0.50 Ω MAX. @VGS =.
  • 10 V, ID =.
  • 1.0 A 0.8 MIN. S 0.42 ±0.06 1.5 D G 0.47 ±0.06 3.0 0.42 ±0.06 4.0 ±0.25 0.41 +0.03.
  • 0.05.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SJ353 P-Channel MOSFET
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2SJ357 P-Channel MOSFET
2SJ358 P-Channel MOSFET
2SJ302 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. PACKAGE DIMENSIONS (in mm) 4.5 ±0.1 1.6 ±0.2 1.5 ±0.1 FEATURES • Can be directly driven by 5-V IC • Low ON resistance RDS(on) = 0.95 Ω MAX. @VGS = –4 V, ID = –1.0 A RDS(on) = 0.50 Ω MAX. @VGS = –10 V, ID = –1.0 A 0.8 MIN. S 0.42 ±0.06 1.5 D G 0.47 ±0.06 3.0 0.42 ±0.06 4.0 ±0.25 0.41 +0.03 –0.