NEC 2SJ356
The 2SJ356 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters.| Part No. | 2SJ356 |
|---|---|
| Datasheet | 2SJ356 Download |
| Manufacturer |  NEC |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Can be directly driven by 5-V IC● Low ON resistance RDS(on) = 0.95 Ω MAX. @VGS = –4 V, ID = –1.0 A RDS(on) = 0.50 Ω MAX. @VGS = –10 V, ID = –1.0 A 0.8 MIN. S 0.42 ±0.06 1.5 D G 0.47 ±0.06 3.0 0.42 ±0.06 4.0 ±0.25 0.41 +0.03 –0.05 EQUIVALENT CIRCUIT Drain (D) Gate (G) Gate protection diode Source (S) Internal PIN CONNECTIONS diode S: Source D: Drain G: Gate Marking: PR
ABSOLUTE MAXIMUM RATINGS
(TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms Duty cycle ≤ 1 % 16 cm2 × 0.7 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING –60 –20/+10 ± 2.0 ± 4.0 UNIT V V A A Total Power Dissipation Channel Temperature Storage Temperature PT Tch Tstg 2.5 ±0.1 2.0 W ˚C ˚C 150 –55 to +150 The internal diode connected between the gate and source of this product is to protect the product from static electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect a protection circuit.
