Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SJ356 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters.
PACKAGE DIMENSIONS (in mm)
4.5 ±0.1 1.6 ±0.2 1.5 ±0.1
Features
- Can be directly driven by 5-V IC
- Low ON resistance RDS(on) = 0.95 Ω MAX. @VGS =
- 4 V, ID =
- 1.0 A RDS(on) = 0.50 Ω MAX. @VGS =
- 10 V, ID =
- 1.0 A
0.8 MIN.
S 0.42 ±0.06 1.5
0.47 ±0.06 3.0
0.42 ±0.06
4.0 ±0.25
0.41 +0.03
- 0.05
EQUIVALENT...
