Datasheet4U Logo Datasheet4U.com

2SJ360 Datasheet P-channel MOSFET

Manufacturer: Kexin Semiconductor

Overview: SMD Type P-Channel MOSFET 2SJ360 MOSFET ■.

Key Features

  • s.
  • VDS (V) =-60V.
  • ID =-1 A.
  • RDS(ON) ＜ 0.73Ω (VGS =-10V).
  • RDS(ON) ＜ 1.2Ω (VGS =-4V).
  • High forward transfer admittance D G S 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Drain.
  • Gate voltage (RGS = 20 k Ω) Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance, Channel to Ambient Junction Temperature Junction Storage Temperature Range Sym.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Toshiba Semiconductor Logo 2SJ360 P-Channel MOSFET Toshiba Semiconductor
VBsemi Logo 2SJ360 60V P-Channel MOSFET VBsemi

More Datasheets from Kexin Semiconductor

Part Number Description
2SJ3001 P-Channel MOSFET
2SJ3001DS P-Channel Enhancement MOSFET
2SJ302 Mos Field Effect Power Transistor
2SJ302-ZJ P-Channel MOSFET
2SJ3021 P-Channel Enhancement MOSFET
2SJ3031DS P-Channel Enhancement MOSFET
2SJ3047DS P-Channel Enhancement MOSFET
2SJ3053DV P-Channel MOSFET
2SJ319S P-Channel MOSFET
2SJ324 MOS Field Effect Power Transistors

2SJ360 Distributor