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2SJ360 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-60V.
  • ID =-1 A.
  • RDS(ON) ＜ 0.73Ω (VGS =-10V).
  • RDS(ON) ＜ 1.2Ω (VGS =-4V).
  • High forward transfer admittance D G S 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Drain.
  • Gate voltage (RGS = 20 k Ω) Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance, Channel to Ambient Junction Temperature Junction Storage Temperature Range Sym.

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SMD Type P-Channel MOSFET 2SJ360 MOSFET ■ Features ● VDS (V) =-60V ● ID =-1 A ● RDS(ON) ＜ 0.73Ω (VGS =-10V) ● RDS(ON) ＜ 1.2Ω (VGS =-4V) ● High forward transfer admittance D G S 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Drain−Gate voltage (RGS = 20 k Ω) Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance, Channel to Ambient Junction Temperature Junction Storage Temperature Range Symbol VDS VDG VGS ID IDM PD RθJA TJ Tstg Rating -60 -60 ±20 -1 -4 0.5 1.5 250 150 -55 to 150 Unit V A W ℃/W ℃ www.kexin.com.