2SJ360 Datasheet | Kexin Semiconductor

Features - VDS (V) =-60V - ID =-1 A - RDS(ON) ＜ 0.73Ω (VGS =-10V) - RDS(ON) ＜ 1.2Ω (VGS =-4V) - High forward transfer admittance 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Drain- Gate voltage (RGS = 20 k Ω) Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance, Channel to Ambient Junction Temperature Junction Storage Temperature Range Symbol VDS VDG VGS ID IDM RθJA TJ Tstg Rating -60 -60 ±20 -1 -4 0.5 1.5 250 150 -55 to 150 Unit V A W ℃/W ℃ .kexin..cn 1 SMD Type MOSFET P-Channel MOSFET 2SJ360 - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Symbol Test Conditions Min Typ Max Unit VDSS ID=-10m A,...