2SJ360
2SJ360 is P-Channel MOSFET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- π- MOSV)
High Speed, High current Switching Applications
Chopper Regulator, DC- DC Converter and Motor Drive Applications
Unit: mm z 4-V gate drive z Low drain- source ON resistance
: RDS (ON) = 0.55 Ω (typ.) z High forward transfer admittance
: |Yfs| = 0.9 S (typ.) z Low leakage current : IDSS =
- 100 μA (max) (VDS =
- 60 V) z Enhancement mode : Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain- source voltage
VDSS
- 60
Drain- gate voltage (RGS = 20 k Ω)
VDGR
- 60
Gate- source voltage
VGSS
±20
Drain current
DC (Note 1)
Pulse (Note 1)
- 1
- 4
Drain power...
