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2SJ605-ZJ - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-60V.
  • ID =-65A.
  • RDS(ON) ＜ 20mΩ (VGS =-10V).
  • RDS(ON) ＜ 31mΩ (VGS =-4V).
  • Low Ciss: Ciss = 4600 pF (TYP. ) Gate Drain Body Diode Gate Protection Diode Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -60 V VGS ±20 Continuous Drain Current ID -65 Pulsed Drain Current (Note.1) IDM -200 A Single Avalanche Current (Note.2) IAS -45 Power Dissipation Tc = 25℃ 100 PD W.

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SMD Type P-Channel MOSFET 2SJ605-ZJ MOSFET ■ Features ● VDS (V) =-60V ● ID =-65A ● RDS(ON) ＜ 20mΩ (VGS =-10V) ● RDS(ON) ＜ 31mΩ (VGS =-4V) ● Low Ciss: Ciss = 4600 pF (TYP.) Gate Drain Body Diode Gate Protection Diode Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -60 V VGS ±20 Continuous Drain Current ID -65 Pulsed Drain Current (Note.1) IDM -200 A Single Avalanche Current (Note.2) IAS -45 Power Dissipation Tc = 25℃ 100 PD W Ta = 25℃ 1.5 Single Avalanche Energy (Note.2) EAS 203 mJ Junction Temperature Junction Storage Temperature Range TJ 150 ℃ Tstg -55 to 150 Note.1: PW ≤ 10us,Duty Cycle ≤ 1% Note.2: Starting TJ = 25 °C,VDD=-30V, RG = 25Ω , VGS = –20 V → 0 www.kexin.com.