2SJ605 Description
The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SJ605 2SJ605-S 2SJ605-ZJ 2SJ605-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote.
2SJ605 Key Features
- Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = -10 V, ID = -33 A) RDS(on)2 = 31 mΩ MAX. (VGS = -4.0 V, ID =
- Low input capacitance ! Ciss = 4600 pF TYP. (VDS = -10 V, VGS = 0 A)
- Built-in gate protection diode