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2SJ605 Datasheet Mos Field Effect Transistor

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL.

General Description

The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications.

ORDERING INFORMATION PART NUMBER 2SJ605 2SJ605-S 2SJ605-ZJ 2SJ605-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote

Key Features

  • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 33 A) RDS(on)2 = 31 mΩ MAX. (VGS =.
  • 4.0 V, ID =.
  • 33 A).
  • Low input capacitance ! Ciss = 4600 pF TYP. (VDS =.
  • 10 V, VGS = 0 A).
  • Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB).

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2SJ605 Distributor