Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SJ605 2SJ605-S 2SJ605-ZJ 2SJ605-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote
Features
- Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS =
- 10 V, ID =
- 33 A) RDS(on)2 = 31 mΩ MAX. (VGS =
- 4.0 V, ID =
- 33 A)
- Low input capacitance ! Ciss = 4600 pF TYP. (VDS =
- 10 V, VGS = 0 A)
- Built-in gate protection diode
Note TO-220SMD package is produced only in Japan.
(TO-220AB)...
