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2SJ605 - MOS FIELD EFFECT TRANSISTOR

General Description

The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 33 A) RDS(on)2 = 31 mΩ MAX. (VGS =.
  • 4.0 V, ID =.
  • 33 A).
  • Low input capacitance ! Ciss = 4600 pF TYP. (VDS =.
  • 10 V, VGS = 0 A).
  • Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SJ605 2SJ605-S 2SJ605-ZJ 2SJ605-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance ! Ciss = 4600 pF TYP. (VDS = –10 V, VGS = 0 A) • Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) www.DataSheet4U.