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2SJ605 - MOS Field Effect Transistors

Key Features

  • Super low on-state resistance: RDS(on)1 = 20 m RDS(on)2 = 31 m MAX. (VGS = -10 V, ID = -33 A) + 0 .2 8 .7 -0 .2 MAX. (VGS = -4.0 V, ID = -33 A) Low input capacitance Ciss = 4600 pF TYP. (VDS = -10 V, VGS = 0 A) +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 Built-in gate protection diode + 0 .2 5 .2 8 -0 .2 + 0 .2 1 5 .2 5 -0 .2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Curre.

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SMD Type MOS Field Effect Transistors 2SJ605 TO-263 + 0 .1 1 .2 7 -0 .1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Super low on-state resistance: RDS(on)1 = 20 m RDS(on)2 = 31 m MAX. (VGS = -10 V, ID = -33 A) + 0 .2 8 .7 -0 .2 MAX. (VGS = -4.0 V, ID = -33 A) Low input capacitance Ciss = 4600 pF TYP. (VDS = -10 V, VGS = 0 A) +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 Built-in gate protection diode + 0 .2 5 .2 8 -0 .2 + 0 .2 1 5 .2 5 -0 .2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(pulse) *1 Total Power Dissipation Channel Temperature Storage temperature Single Avalanche Current *2 Single Avalanche Energy *2 *1.