The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SJ605-VB
PRODUCT SUMMARY
VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration
2SJ605-VB Datasheet P-Channel 60-V (D-S) MOSFET
-60
V
19
mΩ
26
mΩ
-50
A
Single
FEATURES
• Trench Power MOSFET • 100 % UIS Tested APPLICATIONS • Load Switch
TO-220AB
S
G
www.VBsemi.com
GD S Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
L = 0.
2SJ605 Datasheet
