2SJ605 Description
2SJ605-VB PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration 2SJ605-VB Datasheet P-Channel 60-V (D-S) MOSFET -60 V 19 mΩ 26 mΩ -50.
2SJ605 Key Features
- Trench Power MOSFET
- 100 % UIS Tested
- Part: 2SJ605
- Manufacturer: VBsemi
- Size: 354.63 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
NEC |
2SJ605 | MOS FIELD EFFECT TRANSISTOR |
Kexin Semiconductor |
2SJ605 | MOS Field Effect Transistors |
|
Kexin Semiconductor |
2SJ605-ZJ | P-Channel MOSFET |