2SK3018W Datasheet | Kexin Semiconductor

Features ƽ VDS (V) = 30V ƽ ID = 0.1 A ƽ RDS(ON) ˘ 8¡ (VGS = 4V) ƽ RDS(ON) ˘ 13¡ (VGS = 2.5V) Gate Gate Protection Diode Drain Source 1. Gate 2. Source 3. Drain Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD TJ Tstg Rating 30 ±20 100 400 150 150 -55 to 150 Note.1: PW İ 10us, Duty Cycle İ 1% Ƶ Electrical Characteristics Ta = 25ć Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Symbol VDSS IDSS IGSS VGS(th) RDS(On) g FS Ciss Coss Crss td(on) tr td(off) tf Test Conditions ID=250­A, VGS=0V VDS=30V, VGS=0V VDS=0V, VGS=±20V VDS=3V , ID=0.1m A VGS=4V, ID=10m A VGS=2.5V, ID=1m A VDS=3V, ID=10m A VGS=0V, VDS=5V, f=1MHz VGS=5V, VDS=5V, ID=10m A,RL=500¡,RG=10¡ Ƶ Marking Marking Unit V m A m W ć Min Typ Max Unit 1 u A ±1 u A 1.5 V 8 ȍ 20 m S 9 p F 35...