• Part: 2SK3018
  • Description: N-Channel Enhancement Mode Field Effect Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 230.15 KB
Download 2SK3018 Datasheet PDF
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Datasheet Summary

Production specification N-Channel Enhancement Mode Field Effect Transistor 2SK3018 Features z Low on-resistance. z Fast switching speed. z Low voltage drive(2.5V)makes this Device ideal for portable equipment. z Easily designed drive circuits. z Easy to parallel. Pb Lead-free APPLICATIONS z Interfacing,switching (30V,100mA) ORDERING INFORMATION Type No. Marking SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage VGSS ID IDP- 1 IDR IDRP- 1 PD- 2 Gate -Source voltage ±20 drain current Reverse drain current Continuous 100 Pulsed Continuous 100 Pulsed Total Power...