Datasheet4U Logo Datasheet4U.com

2SK3050DFN - N-Channel MOSFET

Key Features

  • ƽ VDS = 100 V ƽ ID (at VGS = 10 V) = 8 A ƽ RDS(ON) (at VGS = 10 V) < 32 mȍ ƽ RDS(ON) (at VGS = 4.5 V) < 39 mȍ DFN2x2C-8L Pin1 MOSFET D S G Pin1 D G S Ƶ Absolute Maximum Ratings (TA = 25ć unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current C Power Dissipation B Thermal Resistance. Junction- to-Ambient A Thermal Resistance. Junction- to-Ambient A D Junction Temperature Storage Temperature Range TA=25ć TA=70ć TA=25ć TA=7.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3050 Small switching Transistors Rohm
2SK3051 N-Channel MOSFET Toshiba Semiconductor
2SK3053 N-Channel MOSFET NEC
2SK3054 N-Channel MOSFET NEC
2SK3054C N-CHANNEL MOSFET Renesas

Other Datasheets by Kexin Semiconductor

Part Number Description
2SK3012DSE N-Channel MOSFET
2SK3018 N-Channel MOSFET
2SK3019 N-Channel MOSFET
2SK3022 Silicon N-Channel Power F-MOSFET
2SK3024 Silicon N-Channel Power F-MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type N-Channel MOSFET 2SK3050DFN Ƶ Features ƽ VDS = 100 V ƽ ID (at VGS = 10 V) = 8 A ƽ RDS(ON) (at VGS = 10 V) < 32 mȍ ƽ RDS(ON) (at VGS = 4.5 V) < 39 mȍ DFN2x2C-8L Pin1 MOSFET D S G Pin1 D G S Ƶ Absolute Maximum Ratings (TA = 25ć unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current C Power Dissipation B Thermal Resistance.Junction- to-Ambient A Thermal Resistance.Junction- to-Ambient A D Junction Temperature Storage Temperature Range TA=25ć TA=70ć TA=25ć TA=70ć t İ 10s Steady-State Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 100 ±20 8 6 32 4.1 2.6 30 55 150 -55 to 150 Unit V A W ć/W ć www.kexin.com.