• Part: 2SK3050
  • Description: Small switching Transistors
  • Category: Transistor
  • Manufacturer: ROHM
  • Size: 124.26 KB
Download 2SK3050 Datasheet PDF
ROHM
2SK3050
2SK3050 is Small switching Transistors manufactured by ROHM.
Transistors Small switching (600V, 2A) 2SK3050 z Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. z External dimensions (Unit : mm) 1.5±0.3 6.5±0.2 0.2 5.1 + - 0.1 C0.5 0.2 2.3 + - 0.1 0.5±0.1 0.75 0.9 0.65±0.1 0.5±0.1 2.3±0.2 2.3±0.2 1.0±0.2 z Structure Silicon N-channel MOSFET z Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Reverse drain current Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP∗ IDR IDRP∗ PD Total power dissipation (Tc=25°C) Channel temperature Storage temperature ∗Pw≤10µs, Duty cycle≤1% z Packaging specifications Package Code Type Basic ordering unit (pieces) w w w .D Tch a t e e h S ta Limits 600 ±30 2 Unit V V A 6 2 6 A A A 20 150 - 55 to +150 W °C °C ROHM : CPT3 EIAJ : SC-63 (1) (2) (3) U 4 .c 2.5 m o (1) Gate (2) Drain (3) Source 0.3 5.5 + - 0.1 Tstg Taping TL 2500 9.5±0.5 1/4 w w w .D a S ta h t4 e e U o .c m Transistors z Electrical characteristics (Ta=25°C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Reverse recovery time Reverse recovery charge Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) | Yfs | Ciss Coss Crss td(on) tr td(off) tf trr Qrr Min. - 600 -...