2SK3065 Datasheet | Kexin Semiconductor

Features Low on resistance. High-speed switching. Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). Driving circuit is easy. Easy to use parallel. It is strong to an electrostatic discharge. SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 3.00+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 Channel temperature Storage temperature - PW 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Marking Marking Symbol Rating Unit VDSS VGSS Idp - 8 Tch Tstg -55 to...