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2SK3065 - Silicon N-Channel MOSFET

Key Features

  • Low on resistance. High-speed switching. Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). Driving circuit is easy. Easy to use parallel. It is strong to an electrostatic discharge. SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 3.00+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 Channel temperature Storage temperature.
  • PW 10 s,Duty.

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SMD Type MOSFET Silicon N-Channel MOSFET 2SK3065 Features Low on resistance. High-speed switching. Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). Driving circuit is easy. Easy to use parallel. It is strong to an electrostatic discharge. SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 3.00+0.1 -0.