2SK3065 - N-Channel MOSFET

ROHM

Key Features

1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. !Structure Silicon N-channel MOS FET transistor !External dimensions (Units : mm) 0.2 4.5+.
0.1 1.6±0.1 1.5±0.1 +0.5 4.0.
0.3 2.5+0.2.
0.1 0.5±0.1 (1) (2) (3) 0.4±0.1 1.5±0.1 1.0±0.3 0.1 0.4+.
0.05 0.4±0.1 1.5±0.1 0.5±0.1.

2SK3065 n-channel mosfet by ROHM - Datasheet Preview

Datasheet Details

Part number	2SK3065
Manufacturer	ROHM
File Size	85.22 KB
Description	N-Channel MOSFET
Datasheet	2SK3065 Datasheet

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Other Datasheets by ROHM

Part Number	Description
2SK3018	2.5V Drive Nch MOS FET
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Full PDF Text Transcription (Reference)

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2SK3065 Transistors Small switching (60V, 2A) 2SK3065 !Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. !Structure Silicon N-channel MOS FET transistor !External dimensions (Units : mm) 0.2 4.5+ −0.1 1.6±0.1 1.5±0.1 +0.5 4.0− 0.3 2.5+0.2 −0.1 0.5±0.1 (1) (2) (3) 0.4±0.1 1.5±0.1 1.0±0.3 0.1 0.4+ −0.05 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.