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AO4900 - Dual N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 30V.
  • ID = 6.9 A (VGS = 10V).
  • RDS(ON) ＜ 27mΩ (VGS = 10V).
  • RDS(ON) ＜ 32mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 50mΩ (VGS = 2.5V).
  • VDS (V) = 30V, IF = 3A, VF.

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SMD Type Dual N-Channel MOSFET AO4900 (KO4900) ■ Features ● VDS (V) = 30V ● ID = 6.9 A (VGS = 10V) ● RDS(ON) ＜ 27mΩ (VGS = 10V) ● RDS(ON) ＜ 32mΩ (VGS = 4.5V) ● RDS(ON) ＜ 50mΩ (VGS = 2.5V) ● VDS (V) = 30V, IF = 3A, VF<0.5V@1A +0.04 0.21 -0.02 SOP-8 MOSFET Unit:mm 1.50 0.15 1 S2/A 5 D1 2 G2 6 D1 3 S1 7 D2/K 4 G1 8 D2/K D2 D1 K A G2 G1 S2 S1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Schottky Reverse Voltage Continuous Drain Current Pulsed Drain Current TA=25℃ TA=70℃ Avalanche Current Repetitive avalanche energy Continuous Forward Current Pulsed Diode Forward Current L=0.3mH TA=25℃ TA=70℃ Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.