AO4900 Description
AO4900-VB AO4900-VB Datasheet Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode .VBsemi.
AO4900 Key Features
- Halogen-free According to IEC 61249-2-21
- Trench Power MOSFET
- 100 % UIS Tested
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC