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AO4900 - Dual N-Channel MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Trench Power MOSFET.
  • 100 % UIS Tested.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number AO4900
Manufacturer VBsemi
File Size 353.85 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet AO4900 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4900-VB AO4900-VB Datasheet Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.008 at VGS = 10 V 30 0.012 at VGS = 4.5 V ID (A) 8 6.8 Qg (Typ.