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BSH105 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 20V.
  • ID = 1.05 A (VGS = 10V).
  • RDS(ON) ＜ 200mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 250mΩ (VGS = 2.5V).
  • RDS(ON) ＜ 300mΩ (VGS = 1.8V) D G S +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Drain-Gate voltage (RGS = 20 KΩ) Gate-Source Voltage Con.

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SMD Type N-Channel MOSFET BSH105 (KSH105) MOSFET ■ Features ● VDS (V) = 20V ● ID = 1.05 A (VGS = 10V) ● RDS(ON) ＜ 200mΩ (VGS = 4.5V) ● RDS(ON) ＜ 250mΩ (VGS = 2.5V) ● RDS(ON) ＜ 300mΩ (VGS = 1.8V) D G S +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Drain-Gate voltage (RGS = 20 KΩ) Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Ta=25℃ Ta=100℃ Ta=25℃ Ta=100℃ Symbol VDS VDGR VGS ID IDM PD RthJA TJ Tstg Rating 20 20 ±8 1.05 0.67 4.