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BSH105 - N-channel enhancement mode MOS transistor

General Description

N-channel, enhancement mode, logic level, field-effect power transistor.

This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing.

Key Features

  • Very low threshold voltage.
  • Fast switching.
  • Logic level compatible.
  • Subminiature surface mount package BSH105 SYMBOL d QUICK.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package BSH105 SYMBOL d QUICK REFERENCE DATA VDS = 20 V ID = 1.05 A g RDS(ON) ≤ 250 mΩ (VGS = 2.5 V) VGS(TO) ≥ 0.4 V s GENERAL DESCRIPTION N-channel, enhancement mode, logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH105 is supplied in the SOT23 subminiature surface mounting package.