Kexin Electronics DAN222
Switching Diodes
FEATURES
● Four types of packaging are available● High speed
● Suitable for high packing density layout
● High reliability 1 2 3 +0.050.75 -0.05 +0.10.8 -0.1 SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 21 U nit: m m 0.15±0.05 0.55 (REF.) 0.8±0.1 +0.151.6 -0.15 0.36±0.1 3 0.5 +0.1 -0.1 0.3±0.05
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Peak Reverse Voltage DC Reverse Voltage Average forward current Peak Forward Surge Current Power Dissipation Junction Temperature Storage Temperature range Symbol VRM VR IO IFM Pd TJ Tstg Rating 80 80 100 300 150 150 -55 to 150●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Reverse breakdown voltage Forward voltage Reverse voltage leakage current Junction capacitance Reverse recovery time Symbol Test Conditions VR IR= 100 uA VF IF= 100mA IR VR= 70 V Cj VR= 6 V, f= 1 MHz trr IF=IR=5mA , VR=6V● Marking Marking N Unit V mA mW ℃ Min Ty