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IRF830S - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 500V.
  • ID = 4.5 A (VGS = 10V).
  • RDS(ON) ＜ 1.5Ω (VGS = 10V).
  • Fast Switching.
  • Repetitive Avalanche Rated D G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Tc=25℃ Tc=100℃ Power Dissipation Tc=25℃ Ta=25℃ Single Pulse Avalanche Energy (Note1) Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 2) Thermal Resistance. Junction- to-Ambient.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type N-Channel MOSFET IRF830S (KRF830S) MOSFET ■ Features ● VDS (V) = 500V ● ID = 4.5 A (VGS = 10V) ● RDS(ON) ＜ 1.5Ω (VGS = 10V) ● Fast Switching ● Repetitive Avalanche Rated D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Tc=25℃ Tc=100℃ Power Dissipation Tc=25℃ Ta=25℃ Single Pulse Avalanche Energy (Note1) Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 2) Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Ambient (PCB Mount) Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM IAR PD EAS EAR dv/dt RthJA RthJC TJ Tstg Note.1: L = 24mH, IAS = 4.