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IRF830S Datasheet N-channel MOSFET

Manufacturer: Kexin Semiconductor

Overview: SMD Type N-Channel MOSFET IRF830S (KRF830S) MOSFET ■.

Key Features

  • s.
  • VDS (V) = 500V.
  • ID = 4.5 A (VGS = 10V).
  • RDS(ON) ＜ 1.5Ω (VGS = 10V).
  • Fast Switching.
  • Repetitive Avalanche Rated D G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Tc=25℃ Tc=100℃ Power Dissipation Tc=25℃ Ta=25℃ Single Pulse Avalanche Energy (Note1) Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 2) Thermal Resistance. Junction- to-Ambient.

IRF830S Distributor

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