KI010NDS
KI010NDS is N-Channel MOSFET manufactured by Kexin Semiconductor.
Features
- VDS (V) = 20V
- ID = 6 A (VGS = 10V)
- RDS(ON) ＜ 12mΩ (VGS = 4.5V)
- RDS(ON) ＜ 18mΩ (VGS = 2.5V)
N-Channel MOSFET KI010NDS
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
+0.2 2.8 -0.1
0.95 +0.1 -0.1 1.9 +0.1 -0.2
0-0.1 +0.1 0.68
-0.1
+0.2 1.6 -0.1
+0.2 1.1 -0.1
MOSFET
Unit: mm
0.15 +0.02 -0.02
1. Gate 2. Source 3. Drain
- Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range
Symbol VDS VGS ID PD Rth JA TJ Tstg
Rating 20 ±12 6 2 62.5 150
-55 to 150
Unit V
A W ℃/W ℃
- Electrical Characteristics Ta = 25℃
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage
Symbol VDSS IDSS IGSS VGS(th)
Static Drain-Source On-Resistance
RDS(On)
Test Conditions ID=250μA, VGS=0V VDS=20V, VGS=0V,TJ=25℃ VDS=0V, VGS=±12V VDS=VGS , ID=250μA VGS=4.5V, ID=6A VGS=2.5V, ID=5A
- Marking
Marking
010N...
