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KI016N - N-Channel MOSFET

Key Features

  • ƽ VDS (V) = 18V ƽ ID = 6.0 A (VGS =4.5V) ƽ RDS(ON) ˘ 22m¡ (VGS = 4.5V) ƽ RDS(ON) ˘ 27m¡ (VGS = 2.5V) ƽ RDS(ON) ˘ 34m¡ (VGS = 1.8V) G1 S2 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 +0.2 2.8 -0.1 3D 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ =150ć.
  • 1 Pulsed Drain Curre.

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SMD Type N-Channel MOSFET KI016N MOSFET Ƶ Features ƽ VDS (V) = 18V ƽ ID = 6.0 A (VGS =4.5V) ƽ RDS(ON) ˘ 22m¡ (VGS = 4.5V) ƽ RDS(ON) ˘ 27m¡ (VGS = 2.5V) ƽ RDS(ON) ˘ 34m¡ (VGS = 1.8V) G1 S2 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 +0.2 2.8 -0.1 3D 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ =150ć*1 Pulsed Drain Current *2 Ta=25ć Ta=70ć Avalanche Current *2 Single Avalanche Energy L=0.1mH Power Dissipation *1 Ta=25ć Ta=70ć Thermal Resistance.Junction- to-Ambient *1 tİ5 sec Steady State Thermal Resistance.