KI2310
KI2310 is N-Channel Enhancement MOSFET manufactured by Kexin Semiconductor.
Features
- VDS=20V
- ID = 6 .5A
- RDS(on)= 22mΩ@VGS=4.5V ,ID=6.5A
- RDS(on)= 30mΩ@VGS=2.5V ,ID=5.5A
G1
S2
3D
+0.1 2.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.1 1.3 -0.1
+0.1 0.97 -0.1
Unit: mm
0.1 +0.05 -0.01
1.Gate 2.Source 3.Drain
0-0.1 +0.1 0.38
-0.1
- Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current
TA=25℃ TA=70℃
Power Dissipation Junction Temperature
TA=25℃ TA=70℃
Storage Temperature Range
Symbol VDS VGS
IDM PD
TJ Tstg
Rating 20
±10 6.5 4.8 30 1.3 0.8 150 -55 to...
