KI2312
KI2312 is N-Channel Enhancement MOSFET manufactured by Kexin Semiconductor.
Features
ƽ VDS (V) = 20V ƽ ID = 4.9 A (VGS =4.5V) ƽ RDS(ON) ˘ 33m¡ (VGS = 4.5V) ƽ RDS(ON) ˘ 40m¡ (VGS = 2.5V)
ƽ RDS(ON) ˘ 51m¡ (VGS = 1.8V)
- 6
627
'
1.6
8QLW PP
- DWH 6RXUFH 'UDLQ
Ƶ Absolute Maximum Ratings Ta = 25ć
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current TJ =150ć- 1
Ta=25ć Ta=70ć
Pulsed Drain Current
- 2
Avalanche Current
- 2
Single Avalanche Energy
L=0.1m H
Power Dissipation
- 1
Ta=25ć Ta=70ć
Thermal Resistance.Junction- to-Ambient
- 1 tİ5...
