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KI2310DS - N-Channel MOSFET

Key Features

  • s.
  • VDS=20V.
  • ID = 6 .5A.
  • RDS(on)= 22mΩ@VGS=4.5V ,ID=6.5A.
  • RDS(on)= 30mΩ@VGS=2.5V ,ID=5.5A G1 S2 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 +0.2 2.8 -0.1 3D 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25℃ TA=70℃ Power Dissipa.

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SMD Type N-Channel Enhancement MOSFET KI2310DS MOSFET ■ Features ● VDS=20V ● ID = 6 .5A ● RDS(on)= 22mΩ@VGS=4.5V ,ID=6.5A ● RDS(on)= 30mΩ@VGS=2.5V ,ID=5.5A G1 S2 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 +0.2 2.8 -0.1 3D 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25℃ TA=70℃ Power Dissipation Junction Temperature TA=25℃ TA=70℃ Storage Temperature Range Symbol VDS VGS ID IDM PD TJ Tstg Rating 20 ±10 6.5 4.8 30 1.3 0.