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KPA1716 - MOS Field Effect Transistor

Key Features

  • Low on-state resistance RDS(on)1 = 12.5 m RDS(on)2 = 17 m RDS(on)3 = 19 m TYP. (VGS = -10 V, ID = -4 A) TYP. (VGS = -4.5 V, ID = -4 A) TYP. (VGS = -4.01 V, ID = -4 A) Low Ciss : Ciss = 2100 pF TYP. Built-in G-S protection diode Small and surface mount package Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Ta = 25 Drain Current (Pulse).
  • 1 Total Power DissipationTa = 25 Channel Temperature Storage Temperature.

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SMD Type MOS Field Effect Transistor KPA1716 IC IC Features Low on-state resistance RDS(on)1 = 12.5 m RDS(on)2 = 17 m RDS(on)3 = 19 m TYP. (VGS = -10 V, ID = -4 A) TYP. (VGS = -4.5 V, ID = -4 A) TYP. (VGS = -4.01 V, ID = -4 A) Low Ciss : Ciss = 2100 pF TYP. Built-in G-S protection diode Small and surface mount package Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Ta = 25 Drain Current (Pulse) *1 Total Power DissipationTa = 25 Channel Temperature Storage Temperature *1 PW 10 s, Duty cycle 1% *2 Symbol VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Rating -30 20 8 32 2.0 150 -55 to + 150 Unit V V A A W *2 Mounted on ceramic substrate of 1200mm2 X1.0 mm www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.