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KPA1750 - MOS Field Effect Transistor

Datasheet Summary

Features

  • Dual MOSFET chips in small package 4V Gate Drive Type and Low On-Resistance RDS(on)1 = 0.09 RDS(on)2 = 0.18 TYP. (VGS = -10 V, ID = -1.8 A) TYP. (VGS = -4 V, ID = -1.8A) IC IC Low Ciss : Ciss = 540 pF TYP. Built-in G-S protection diode Small and surface mount package 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Ta = 25 Drain Current (Pulse).
  • 1 Total Power D.

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Datasheet Details

Part number KPA1750
Manufacturer Kexin
File Size 69.75 KB
Description MOS Field Effect Transistor
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SMD Type MOS Field Effect Transistor KPA1750 Features Dual MOSFET chips in small package 4V Gate Drive Type and Low On-Resistance RDS(on)1 = 0.09 RDS(on)2 = 0.18 TYP. (VGS = -10 V, ID = -1.8 A) TYP. (VGS = -4 V, ID = -1.8A) IC IC Low Ciss : Ciss = 540 pF TYP. Built-in G-S protection diode Small and surface mount package 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Ta = 25 Drain Current (Pulse) *1 Total Power DissipationTa = 25 Total Power DissipationTa = 25 Channel Temperature Storage Temperature *1 PW 10 s, Duty cycle 1% *2 *2 Tch Tstg Symbol VDSS VGSS ID(DC) ID(pulse) PT Rating -20 20 3.5 14 1.7 2.
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