KRF7104 Datasheet | Kexin Semiconductor

Features Adavanced Process Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Continuous Drain Current, VGS @ 10V @ Ta = 25 Continuous Drain Current, VGS @ 10V @ Ta = 70 Pulsed Drain Current - 1 Power Dissipation @TC= 25 Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt - 3 dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient - 2 R JA - 1 Repetitive rating; pulse width limited by max. junction temperature. - 2 Surface mounted on FR-4 board, t 10sec. - 3 ISD -2.3A, di/dt 100A/ s, VDD V(BR)DSS,TJ 150 Rating -2.3 -1.8 -10 2.0 0.016 12 -3 -55 to + 150 62.5 Unit W W/ V V/n S /W .kexin..cn 1 SMD...