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KRF7204 - Power MOSFET

Key Features

  • Adavanced Process Technology Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Continuous Drain Current, VGS @ 10V @ TA = 25 ID Continuous Drain Current, VGS @ 10V @ TA = 70 ID Pulsed Drain Current.
  • 1 IDM Power Dissipation @TC = 25 PD Linear Derating Factor Gate-to-Source Voltage VGS Peak Diode Recovery dv/dt.
  • 2 dv/dt Junction and Storage Temperature.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type HEXFET Power MOSFET KRF7204 Features Adavanced Process Technology Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Continuous Drain Current, VGS @ 10V @ TA = 25 ID Continuous Drain Current, VGS @ 10V @ TA = 70 ID Pulsed Drain Current *1 IDM Power Dissipation @TC = 25 PD Linear Derating Factor Gate-to-Source Voltage VGS Peak Diode Recovery dv/dt *2 dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient *3 R JA *1 Repetitive rating; pulse width limited by max. junction temperature. *2 ISD -5.3A, di/dt 90A/ s, VDD V(BR)DSS,TJ 150 *3 Surface mounted on FR-4 board, t 10sec. Rating -5.3 -4.2 -21 2.5 0.02 12 -1.