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KRF7220 - Power MOSFET

Key Features

  • Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain- Source Voltage VDS Continuous Drain Current, VGS @ -4.5V @ Ta = 25 ID Continuous Drain Current, VGS @ -4.5V @ Ta = 70 ID Pulsed Drain Current.
  • 1 IDM Power Dissipation @Ta= 25 PD Power Dissipation @Ta = 70 PD Linear Derating Factor Single Pulse Avalanche Energy.
  • 4 EAS Gate-to-Source Voltage VGS Junction and Storage Temperatur.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type HEXFET Power MOSFET KRF7220 Features Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain- Source Voltage VDS Continuous Drain Current, VGS @ -4.5V @ Ta = 25 ID Continuous Drain Current, VGS @ -4.5V @ Ta = 70 ID Pulsed Drain Current *1 IDM Power Dissipation @Ta= 25 PD Power Dissipation @Ta = 70 PD Linear Derating Factor Single Pulse Avalanche Energy *4 EAS Gate-to-Source Voltage VGS Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient *3 R JA *1 Repetitive rating; pulse width limited by max. junction temperature. *3 Surface mounted on FR-4 board, t 10sec. *4 Starting TJ = 25 , L = 1.8mH,RG = 25 , IAS = 11A Rating -14 11 8.8 88 2.5 1.6 0.