KRF7313 Datasheet | Kexin Semiconductor

Features Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Fully Avalanche Rated ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain- Source Voltage Gate-to-Source Voltage Continuous Drain Current, Ta = 25 - 3 Continuous Drain Current,TC = 70 - 3 Pulsed Drain Current Maximum Power Dissipation Ta = 25 - 3 PD Maximum Power Dissipation Ta = 70 - 3 Single Pulse Avalanche Energy - 4 Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt- 2 dv/dt Operating Junction and Storage Temperature Range TJ,TSTG Maximum Junction-to-Ambient - 3 R JA - 1 Repetitive rating; pulse width limited by max. junction temperature. - 2 ISD 4.0A, di/dt 74A/ s, VDD V(BR)DSS,TJ 150 - 3 Surface mounted on FR-4 board, t 10sec. - 4 Starting TJ=25 ,L=10m H,RG=25 , IAS=4.0A Rating 30 20 6.5 30 2.5 2 1.3 82 4 0.2 5.8 -55 to + 150...