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KRF7313 - Power MOSFET

Key Features

  • Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Fully Avalanche Rated ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain- Source Voltage VDS Gate-to-Source Voltage VGS Continuous Drain Current, Ta = 25.
  • 3 ID Continuous Drain Current,TC = 70.
  • 3 ID Pulsed Drain Current IDM Maximum Power Dissipation Ta = 25.
  • 3 PD Maximum Power Dissipation Ta = 70.
  • 3 Single Pulse Avalanche Energy.
  • 4 EAS Avalanche Current IAR Repeti.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type HEXFET Power MOSFET KRF7313 Features Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Fully Avalanche Rated ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain- Source Voltage VDS Gate-to-Source Voltage VGS Continuous Drain Current, Ta = 25 *3 ID Continuous Drain Current,TC = 70 *3 ID Pulsed Drain Current IDM Maximum Power Dissipation Ta = 25 *3 PD Maximum Power Dissipation Ta = 70 *3 Single Pulse Avalanche Energy *4 EAS Avalanche Current IAR Repetitive Avalanche Energy EAR Peak Diode Recovery dv/dt*2 dv/dt Operating Junction and Storage Temperature Range TJ,TSTG Maximum Junction-to-Ambient *3 R JA *1 Repetitive rating; pulse width limited by max. junction temperature. *2 ISD 4.