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KRF7317 - Power MOSFET

Key Features

  • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated ICIC Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current Ta = 25 Continuous Drain Current Ta = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation @Ta= 25.
  • 2 Power Dissipation @Ta= 70.
  • 2 Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt.

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SMD Type HEXFET Power MOSFET KRF7317 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated ICIC Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current Ta = 25 Continuous Drain Current Ta = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation @Ta= 25 *2 Power Dissipation @Ta= 70 *2 Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt *1 Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 Symbol VDS ID ID IDM IS PD EAS IAR EAR dv/dt VGS TJ, TSTG R JA N-Channel P-Channel 20 -20 6.6 -5.3 5.3 -4.3 26 -21 2.5 -2.5 2.0 1.3 100 150 4.