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KSP126 - N-Channel MOSFET

Features

  • s.
  • VDS (V) = 250V.
  • ID = 350mA.
  • RDS(ON) < 7Ω @ VGS = 10V.
  • Direct interface to C-MOS, TTL,etc.
  • High-speed switching.
  • No secondary breakdown. D G D S SOT-223 6.50±0.2 3.00±0.1 4 10。 Unit:mm 7.0±0.3 3.50±0.2 0.75 (min) 1.6 ± 0.1 1.80 (max) 1 2 3 2.30 (typ) 4.60 (typ) 0.84 (max) 0.66 (min) 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain 0.02 ~ 0.1.
  • Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Parameter Symbol Rating Unit Dra.

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SMD Type TraMnOsiSsFtoErsT N-Channel MOSFET BSP126 (KSP126) ■ Features ● VDS (V) = 250V ● ID = 350mA ● RDS(ON) < 7Ω @ VGS = 10V ● Direct interface to C-MOS, TTL,etc. ● High-speed switching. ● No secondary breakdown. D G D S SOT-223 6.50±0.2 3.00±0.1 4 10。 Unit:mm 7.0±0.3 3.50±0.2 0.75 (min) 1.6 ± 0.1 1.80 (max) 1 2 3 2.30 (typ) 4.60 (typ) 0.84 (max) 0.66 (min) 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain 0.02 ~ 0.1 ■ Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 250 V VGS ±20 Continuous Drain Current ID 350 mA Pulsed Drain Current IDM 1.2 A Power Dissipation PD 1.5 W Thermal Resistance.Junction- to-Ambient (Note 1) Rth j-a 83.
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